Quinas Technology, the startup stemming from Lancaster University with the aim to bring ULTRARAM memory to market, has been recognised as the Best of Show in the Most Innovative Flash Memory Startup category at the Flash Memory Summit held in Santa Clara, CA.
Conceived by Professor Manus Hayne, a member of the Physics Department at Lancaster University, ULTRARAM merges the exceptional performance attributes of dynamic random-access memory (DRAM) with the non-volatility characteristics of flash memory—a feat widely deemed unattainable. Its capabilities encompass the storage of data for over 1,000 years, surpassing those of traditional flash memory. Moreover, it exhibits swift data read and write speeds at a lower energy cost compared to DRAM.
Much like a compound semiconductor iteration of flash memory, ULTRARAM harnesses the quantum-mechanical phenomenon of resonant tunnelling. In this innovative approach, the oxide tunnel barrier within conventional flash memory is replaced by a triple-barrier resonant tunnelling structure. This revolutionary adjustment addresses the limitations of flash memory, enabling a floating-gate memory to function with both low voltage and high speed. This, in turn, results in heightened endurance and unparalleled efficiency while retaining its non-volatile attributes.
Quinas’ primary commercial objective revolves around refining this technology into a product capable of surpassing DRAM—a staple in the realm of digital electronics and computing. Its distinct advantage lies in its non-volatile nature, a significant augmentation to its capabilities. “New forms of memory tiering technology can potentially create compelling value for customer workloads in the future,” said Jay Kramer, Chair of the Awards Program and President of Network Storage Advisors Inc. “We are proud to recognise Quinas Technology for inventing a new type of computer memory which combines speed, endurance, retention and energy efficiency into a single memory concept.”
James Ashforth-Pook, CEO of Quinas Technology said, “Quinas is delighted to have been honoured with this award by Flash Memory Summit. It is particularly gratifying to have this endorsement from the world’s leading memory conference, given the highly disruptive use of compound semiconductors in ULTRARAM.”
The Flash Memory Summit award is given for ’innovations that will change the way flash memory and all other forms of high-performance memory work, and how it is used in products. The recipients of this award will enjoy significant differentiation of their intellectual property and patents from alternative competitive technologies in the memory industry.’
